NEHRU JARPULA

:: AIML-B I B.TECH II SEM, EDC SLIP TEST - I EXAM ::

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1. The current I in the circuit shown is _________.

A) 1.25 X 10^-3 A
B) 0.75 X 10^-3 A
C) -0.5 X 10^-3 A
D) 1.16 X 10^-3 A

2. A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if

A) Both the P-Region and N-Region are heavily doped
B) The N-Region is heavily doped compared to P-Region
C) The P-Region is heavily doped compared to N-Region
D) An intrinsic region is inserted in between the P-region and the N-region

3. A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statement is true?

A) Silicon atoms act as P-type dopants in Arsenic sites and N-type dopants in Gallium sites.
B) Silicon atoms act as N-type dopants in Arsenic sites and P-type dopants in Gallium sites.
C) Silicon atoms act as P-type dopants in Arsenic sites as well as in Gallium sites.
D) Silicon atoms act as N-type dopants in Arsenic sites as well as in Gallium sites.

4. In a forward biased P-N junction diode, the sequence of events that best describes the mechanism of current flow is.

A) Injection and subsequent diffusion and recombination of minority carriers
B) Injection and subsequent drift and generation of minority carriers
C) Injection and subsequent diffusion and generation of minority carriers
D) Injection and subsequent drift and recombination of minority carriers

5. Injection and subsequent diffusion and recombination of minority carriers.

A) Junction Capacitance
B) Charge Storage Capacitance
C) Depletion Capacitance
D) Channel Length Modulation

6. In a P⁺ N junction diode under reverse bias, the magnitude of electric field is maximum at

A) The edge of the depletion region on the P-Side
B) The edge of the depletion region on the N-Side
C) The P⁺ N Junction
The center of the depletion region on the N-Side

7. A zener diode works on the principle of

A) Tunneling of charge carriers across the junction
B) Thermo ionic emission
C) Diffusion of charge carriers across the junction
D) Hopping of charge carriers across the junction

8 What is the effect of temperature on the recombination rate of electrons in electronic circuits?

A) Recombination rate increases with increase in the temperature
B) Recombination rate decreases with increase in the temperature
C) Recombination rate is independent of temperature
D) Recombination of electrons doesn’t occur in semiconductors

9.Diffusion current is due to ___________

A) Applied electric field over a given distance
B) Variation in carrier concentration
C) Random motion of holes
D) Recombination of holes and electrons

10. Is the statement “Diffusion current produces Drift current” true?

A) Yes
B) NO
C) Cannot say
D) Insufficient Data

*** GOOD LUCK ***